Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layerTIANFENG LI; YONGHAI CHEN; WEN LEI et al.Physica. E, low-dimentional systems and nanostructures. 2011, Vol 43, Num 4, pp 869-873, issn 1386-9477, 5 p.Article

Parametric modeling of the dielectric functions of InAs_xP_{1 - x} alloy films on InPBYUN, J. S; KIM, T. J; HWANG, S. Y et al.Thin solid films. 2014, Vol 558, pp 438-442, issn 0040-6090, 5 p.Article

Directions and Breakup of Self-Running In Droplets on Low-Index InP SurfacesKANJANACHUCHAI, Songphol; EUARUKSAKUL, Chanan.Crystal growth & design. 2014, Vol 14, Num 2, pp 830-834, issn 1528-7483, 5 p.Article

Polytypic InP Nanolaser Monolithically Integrated on (001) SiliconZHECHAO WANG; BIN TIAN; VAN THOURHOUT, Dries et al.Nano letters (Print). 2013, Vol 13, Num 11, pp 5063-5069, issn 1530-6984, 7 p.Article

Growth of Ge_1―xSn_x heteroepitaxial layers with very high Sn contents on InP(001) substratesNAKAMURA, Marika; SHIMURA, Yosuke; TAKEUCHI, Shotaro et al.Thin solid films. 2012, Vol 520, Num 8, pp 3201-3205, issn 0040-6090, 5 p.Conference Paper

50 nm continuously tunable MEMS VCSEL devices with surface micromachining operating at 1.95 μm emission wavelengthGRUENDL, Tobias; ZOGAL, Karolina; KUEPPERS, Franko et al.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 012001.1-012001.4Article

Efficiency Enhancement of InP Nanowire Solar Cells by Surface CleaningYINGCHAO CUI; JIA WANG; BAKKERS, Erik P. A. M et al.Nano letters (Print). 2013, Vol 13, Num 9, pp 4113-4117, issn 1530-6984, 5 p.Article

Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II―VI Quantum Cascade LasersMOUG, R. T; SULTANA, H; YAO, Y et al.Journal of electronic materials. 2012, Vol 41, Num 5, pp 944-947, issn 0361-5235, 4 p.Conference Paper

Far-Field Emission Patterns of Nanowire Light-Emitting DiodesMOTOHISA, Junichi; KOHASHI, Yoshinori; MAEDA, Satoshi et al.Nano letters (Print). 2014, Vol 14, Num 6, pp 3653-3660, issn 1530-6984, 8 p.Article

Study of phonons in self-assembled InAs quantum dots embedded in an InGaAlAs matrixKAMIKAWA-SHIMIZU, Yukiko; PATTERSON, Robert; MILEKHIN, Alexander et al.Physica. E, low-dimentional systems and nanostructures. 2014, Vol 57, pp 1-5, issn 1386-9477, 5 p.Article

MOCVD-grown compressively strained C-doped In_xGa_1-xAs_1-ySb_y with high-In/Sb content for very low turn-on-voltage InP-based DHBTsHOSHI, Takuya; KASHIO, Norihide; SUGIYAMA, Hiroki et al.Journal of crystal growth. 2014, Vol 404, pp 172-176, issn 0022-0248, 5 p.Article

Molecular Beam Epitaxial Growth and Properties of Bi₂Se₃ Topological Insulator Layers on Different Substrate SurfacesZHIYI CHEN; GARCIA, Thor Axtmann; DE JESUS, Joel et al.Journal of electronic materials. 2014, Vol 43, Num 4, pp 909-913, issn 0361-5235, 5 p.Conference Paper

Bimodal luminescence behavior of spatially-ordered seven-stacked InAs/InAlGaAs quantum dotsJAE WON OH; RYU, Mee-Yi; BYOUNGGU JO et al.Thin solid films. 2013, Vol 541, pp 68-71, issn 0040-6090, 4 p.Conference Paper

Tunnel Junction with Autodoped AlGaAs on InPOHISO, Yoshitaka; MITSUHARA, Manabu; IGA, Ryuzo et al.Journal of electronic materials. 2013, Vol 42, Num 10, pp 2881-2887, issn 0361-5235, 7 p.Article

Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectorsGU, Y; ZHANG, Y. G; WANG, K et al.Journal of crystal growth. 2013, Vol 378, pp 65-68, issn 0022-0248, 4 p.Conference Paper

Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopiesMATTALAH, M; TELIA, A; SOLTANI, A et al.Thin solid films. 2008, Vol 516, Num 12, pp 4122-4127, issn 0040-6090, 6 p.Article

Droplet Dynamics in Controlled InAs Nanowire InterconnectionsDALACU, Dan; KAM, Alicia; AUSTING, D. Guy et al.Nano letters (Print). 2013, Vol 13, Num 6, pp 2676-2681, issn 1530-6984, 6 p.Article

Carbon doping in InGaAsSb films on (001) InP substrate using CBr₄ grown by metalorganic chemical vapor depositionHOSHI, T; SUGIYAMA, H; YOKOYAMA, H et al.Journal of crystal growth. 2013, Vol 380, pp 197-204, issn 0022-0248, 8 p.Article

Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowiresLINDGREN, David; KAWAGUCHI, Kenichi; HEURLIN, Magnus et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 22, issn 0957-4484, 225203.1-225203.5Article

Fabrication of low-density self-assembled InAs quantum dots on InP(311)B substrate by molecular beam epitaxyAKAHANE, Kouichi; YAMAMOTO, Naokatsu.Journal of crystal growth. 2013, Vol 378, pp 450-453, issn 0022-0248, 4 p.Conference Paper

Proposal of BeZnTe/ZnSeTe superlattice quasi-quaternaries on InP substrates for yellow/green light emitting devicesKOBAYASHI, Toshiki; NOMURA, Ichirou; MURAKAMI, Keisuke et al.Journal of crystal growth. 2013, Vol 378, pp 263-265, issn 0022-0248, 3 p.Conference Paper

Effect of low-temperature InP cap layer thickness on InAs quantum dot photoluminescenceHAO WANG; JIAYUE YUAN; VAN VELDHOVEN, René P. J et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 570-571, issn 0022-0248, 2 p.Conference Paper

Wide-band emissions from highly stacked quantum dot structure grown using the strain-compensation techniqueAKAHANE, Kouichi; YAMAMOTO, Naokatsu.Journal of crystal growth. 2011, Vol 323, Num 1, pp 154-157, issn 0022-0248, 4 p.Conference Paper

Compositionally undulating step-graded InAs_yP_1―y buffer layer growth by metal-organic chemical vapor depositionLIAN JI; LU, S. L; ZHAO, Y. M et al.Journal of crystal growth. 2013, Vol 363, pp 44-48, issn 0022-0248, 5 p.Article

Effects of growth rate on InP nanowires morphology and crystal structurePAIMAN, S; GAO, Q; TAN, H. H et al.Journal of crystal growth. 2013, Vol 383, pp 100-105, issn 0022-0248, 6 p.Article